476 Results for : impedance

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    DN3135N8-G - MOSFET, N-CH, SOT-89, 350 V, 0,18 A, 1,3 W
    DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 35 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 180 mA
    • Shop: reichelt elektronik
    • Price: 0.77 EUR excl. shipping
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    DN3765K4-G - MOSFET, N-CH, DPAK, 650 V, 0,2 A, 2,5 W
    This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 650 V• RDS: 8 Ohm• Ugs (Off): -1,5 ... -3,5 V • Ic: 200 mA
    • Shop: reichelt elektronik
    • Price: 2.20 EUR excl. shipping
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    DN3535N8-G - MOSFET, N-CH, SOT-89, 350 V, 0,2 A, 1,6 W
    DN3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 10 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 300 mA
    • Shop: reichelt elektronik
    • Price: 0.70 EUR excl. shipping
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    DN2530N8-G - MOSFET, N-CH, SOT-89, 300 V, 0,2 A, 1,6 W
    The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 300 V• RDS: 12 Ohm• Ugs: -1,0 ... -3,5 V
    • Shop: reichelt elektronik
    • Price: 0.90 EUR excl. shipping
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    DN3135K1-G - MOSFET, N-CH, SOT-23, 350 V, 0,18 A, 0,36 W
    DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 35 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 180 mA
    • Shop: reichelt elektronik
    • Price: 0.55 EUR excl. shipping
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    DN3545N8-G - MOSFET, N-CH, TO-89, 450 V, 0,2 A, 1,6 W
    These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 450 V• RDS: 20 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 200 mA
    • Shop: reichelt elektronik
    • Price: 0.77 EUR excl. shipping
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    DN2540N3-G - MOSFET, N-Kanal, 400 V, 0,15 A, Rds(on) 17 Ohm, TO-92
    DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 0.98 EUR excl. shipping
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    DN2540N5-G - MOSFET, N-CH, TO-220, 400 V, 0,15 A, 15 W
    DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 1.80 EUR excl. shipping
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    AC DC Einschaltstromzange 6000 Count Automatischer Bereich Zangenmultimeter Temperaturprüfung Multifunktionale Doppelanzeige True RMS AC DC
    Dieser Zangenmesser ist klein, aber leistungsstark. Mit Dual-Chip und Dual-Display können nicht nur Wechselstrom und Gleichstrom, sondern auch Stoßstrom und Temperatur geprüft werden. Dieses Produkt eignet sich auch für Tests von Effektivwert, Kapazität, Widerstand, Diode, Ein-Aus, NCV usw. Funktionen: - Automatischer Bereich, intelligenter Verbrennungsschutz: Intelligenter, effizienter Betrieb, wissenschaftlich genaue Ergebnisse. - Dual Chip Dual Display: Die Frequenz wird gleichzeitig mit der aktuellen Messung angezeigt. - Einschaltstrommessung: Halten Sie die INR-Taste im Wechselstrombereich gedrückt, und die Einschaltstrommessung kann ausgewählt werden. Dann können Sie das Elektrogerät einschalten und dessen momentanen Anlaufstrom messen. - Temperaturmessung: Ausgestattet mit Temperatursondenleitung, Mehrfachnutzung einer Maschine. - LOWz Low Impedance Voltage Measurement: Beurteilen Sie falsche Spannung, automatische AC / DC-Erkennung, intelligent und effizient.
    • Shop: ManoMano
    • Price: 49.99 EUR excl. shipping
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    Fuyi - AC DC Einschaltstromzange 6000 Count Automatischer Bereich Zangenmultimeter Temperaturprüfung Multifunktionale Doppelanzeige True RMS AC DC
    Dieser Zangenmesser ist klein, aber leistungsstark. Mit Dual-Chip und Dual-Display können nicht nur Wechselstrom und Gleichstrom, sondern auch Stoßstrom und Temperatur geprüft werden. Dieses Produkt eignet sich auch für Tests von Effektivwert, Kapazität, Widerstand, Diode, Ein-Aus, NCV usw. Funktionen: - Automatischer Bereich, intelligenter Verbrennungsschutz: Intelligenter, effizienter Betrieb, wissenschaftlich genaue Ergebnisse. - Dual Chip Dual Display: Die Frequenz wird gleichzeitig mit der aktuellen Messung angezeigt. - Einschaltstrommessung: Halten Sie die INR-Taste im Wechselstrombereich gedrückt, und die Einschaltstrommessung kann ausgewählt werden. Dann können Sie das Elektrogerät einschalten und dessen momentanen Anlaufstrom messen. - Temperaturmessung: Ausgestattet mit Temperatursondenleitung, Mehrfachnutzung einer Maschine. - LOWz Low Impedance Voltage Measurement: Beurteilen Sie falsche Spannung, automatische AC / DC-Erkennung, intelligent und effizient.
    • Shop: ManoMano
    • Price: 49.99 EUR excl. shipping

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