1,762 Results for : desired

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    Driving Desired Futures
    Driving Desired Futures ab 39.99 € als pdf eBook: Turning Design Thinking into Real Innovation. Aus dem Bereich: eBooks, Architektur,
    • Shop: hugendubel
    • Price: 39.99 EUR excl. shipping
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    Indoorx Outdoor Invisible Clothesline with Hanger Hole Retractable Clothesline Rope Drying Rack Balcony Clothes Line No White
    Indoor Outdoor Retractable Laundry Clothesline Wall Hanging Stretch Washing Clothes Line New Shrinking Balcony Invisible LineDescription:♦High-quality materials: Adopted Firm ABS body, aluminum bracket and stainless steel line, wearproof and rustproof, smaller size makes it perfect for indoor and outdoor limited spaces♦Freely Retractable: Compact pull out clothes lines, can be locked to the desired length or extended up to 4.2M/13.8Ft and hold a maximum weight of 20KG/44 pound, convenient to be retracted when not in use♦Two Way Installations: 180 rotatable,Simple to install, you can choose glue stick or screws mounted to fix on the wall; With strong bearing capacity, never have to worry about clothes falling off♦Space Saving: Features with concise design- 45 * 130 * 100mm / 1.77 * 5.1 * 3.9in, it can be used almost anywhere to hang different types of clothes such as towels, cloth diapers, underwear, socks as well as bathing suitsSpecifications:Material: ABS, 304 stainless steelColor: whiteRope width:2cmRope length:4.2mBearing capacity: 20 KGPackage Includes:1 x Clothes Line
    • Shop: G2A
    • Price: 35.00 EUR excl. shipping
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    Desired Magic
    Desired Magic ab 21.99 € als Taschenbuch: . Aus dem Bereich: Bücher, Belletristik, Science Fiction & Fantasy,
    • Shop: hugendubel
    • Price: 21.99 EUR excl. shipping
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    The Desired Marriage
    The Desired Marriage ab 9.49 € als epub eBook: Family and Relationships. Aus dem Bereich: eBooks, Fachthemen & Wissenschaft, Religion,
    • Shop: hugendubel
    • Price: 9.49 EUR excl. shipping
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    Something to Be Desired
    Something to Be Desired ab 13.49 € als epub eBook: . Aus dem Bereich: eBooks, Belletristik,
    • Shop: hugendubel
    • Price: 13.49 EUR excl. shipping
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    DN2535N3-G - MOSFET, N-CH, TO-92, 350 V, 0,15 A, 1 W
    DN2535 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 25 Ohm• Ugs: -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 0.62 EUR excl. shipping
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    DN3135N8-G - MOSFET, N-CH, SOT-89, 350 V, 0,18 A, 1,3 W
    DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 35 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 180 mA
    • Shop: reichelt elektronik
    • Price: 0.77 EUR excl. shipping
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    DN3765K4-G - MOSFET, N-CH, DPAK, 650 V, 0,2 A, 2,5 W
    This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 650 V• RDS: 8 Ohm• Ugs (Off): -1,5 ... -3,5 V • Ic: 200 mA
    • Shop: reichelt elektronik
    • Price: 2.20 EUR excl. shipping
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    DN3535N8-G - MOSFET, N-CH, SOT-89, 350 V, 0,2 A, 1,6 W
    DN3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 10 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 300 mA
    • Shop: reichelt elektronik
    • Price: 0.70 EUR excl. shipping
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    DN2530N8-G - MOSFET, N-CH, SOT-89, 300 V, 0,2 A, 1,6 W
    The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 300 V• RDS: 12 Ohm• Ugs: -1,0 ... -3,5 V
    • Shop: reichelt elektronik
    • Price: 0.90 EUR excl. shipping

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