29 Results for : mdmesh

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    STD2N62K3 - MOSFET N-Ch+Z-Dio 620V 2,2A 3,6R TO252
    MDmesh™ K3 Power MOSFETsFeatures100% avalanche testedExtremely high dv/dt capabilityVery low intrinsic capacitanceImproved diode reverse recovery characteristicsZener-protectedDescriptionThese MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.ApplicationsSwitching applications
    • Shop: reichelt elektronik
    • Price: 0.75 EUR excl. shipping
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    STB24N60M2 - MOSFET N-Ch+Z-Dio 600V 18A 0,19R D²Pak
    MDmesh II Plus™ low Qg Power MOSFETFeaturesExtremely low gate chargeLower RDS(on) x area vs previous generationLow gate input resistance100% avalanche testedZener-protectedDescriptionThese devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.ApplicationsSwitching applications
    • Shop: reichelt elektronik
    • Price: 2.60 EUR excl. shipping
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    STB6N60M2 - MOSFET N-Ch+Z-Dio 600V 4,5A 1,2R D²Pak
    MDmesh™ M2 Power MOSFETsFeaturesExtremely low gate chargeExcellent output capacitance (Coss) profile100% avalanche testedZener-protectedDescriptionThese devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding highefficiency converters.ApplicationsSwitching applications
    • Shop: reichelt elektronik
    • Price: 1.03 EUR excl. shipping
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    STB13N60M2 - MOSFET N-Ch+Z-Dio 600V 11A 0,38R D²Pak
    MDmesh™ M2 Power MOSFETsFeaturesExtremely low gate chargeExcellent output capacitance (COSS) profile100% avalanche testedZener-protectedApplicationsSwitching applicationsDescriptionThese devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
    • Shop: reichelt elektronik
    • Price: 2.80 EUR excl. shipping
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    STD7NM60N - MOSFET N-Kanal, 600 V, 5 A, RDS(on) 0,8 Ohm, TO252
    MDmesh™ II Power MOSFETsFeatures100% avalanche testedLow input capacitance and gate chargeLow gate input resistanceDescriptionThese devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’slowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.ApplicationsSwitching applications
    • Shop: reichelt elektronik
    • Price: 0.85 EUR excl. shipping
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    STW28NM50N - MOSFET N-Ch 500V 21A 150W 0,158R TO247
    N-channel 500 V, 0.135 O, 21 A MDmesh™ II Power MOSFETFeatures100% avalanche testedLow input capacitance and gate chargeLow gate input resistanceApplicationsSwitching applications
    • Shop: reichelt elektronik
    • Price: 2.56 EUR excl. shipping
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    STP10N60M2 - MOSFET N-Ch+Z-Dio 600V 7,5A 85W 0,6R TO220
    N-channel 600 V, 0.55 O typ., 7.5 A MDmesh™ M2 Power MOSFETsFeaturesExtremely low gate chargeExcellent output capacitance (COSS) profile100% avalanche testedZener-protectedApplicationsSwitching applications
    • Shop: reichelt elektronik
    • Price: 1.60 EUR excl. shipping
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    STW26NM60N - MOSFET N-Ch 600V 20A 140W 0,165R TO247
    N-channel 600 V, 0.135 O typ., 20 A MDmesh™ II Power MOSFETFeatures100% avalanche testedLow input capacitance and gate chargeLow gate input resistanceApplicationsSwitching applications
    • Shop: reichelt elektronik
    • Price: 2.34 EUR excl. shipping
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    STW32NM50N - MOSFET N-Kanal, 500 V, 22 A, RDS(on) 0,1 Ohm, TO247
    N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh™ II Power MOSFETFeatures100% avalanche testedLow input capacitance and gate chargeLow gate input resistanceApplicationsSwitching applications
    • Shop: reichelt elektronik
    • Price: 3.35 EUR excl. shipping
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    STP26NM60N - MOSFET N-Kanal, 600 V, 20 A, RDS(on) 0,165 Ohm, TO-220
    N-Kanal 600 V, 0,135 O typ., 20 A MDmesh™ II Leistungs-MOSFETs in D²PAK- und TO-220-GehäusenBeschreibungBei diesen Bauelementen handelt es sich um N-Kanal-Leistungs-MOSFETs, die unter Verwendung der zweiten Generation der MDmesh™ Technologie entwickelt wurden. Dieser revolutionäre Power-MOSFET verbindet eine vertikale Struktur mit dem Streifenlayout des Unternehmens, um einen der weltweit niedrigsten Widerstände und Gate-Ladungen zu erzielen. Er eignet sich daher für die anspruchsvollsten Wandler mit hohem Wirkungsgrad.Merkmale• 100% Avalanche geprüft• Niedrige Eingangskapazität und Gate-Ladung• Niedriger Gate-EingangswiderstandApplikationen• Schaltapplikationen
    • Shop: reichelt elektronik
    • Price: 3.65 EUR excl. shipping

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